Main product

Overview


SK Hynix HMA81GS6DJR8N-XN. Component for: Laptop, Internal memory: 8 GB, Memory layout (modules x size): 1 x 8 GB, Internal memory type: DDR4, Memory clock speed: 3200 MHz, Memory form factor: 260-pin SO-DIMM, CAS latency: 22




Specification

Technical Description: SK Hynix HMA81GS6DJR8N-XN memory module 8 GB 1 x 8 GB DDR4 260-pin SO-DIMM
Features
Memory voltage:The voltage (V) of the memory in the device.
1.2 V
Buffered memory type:
Unregistered (unbuffered)
Memory clock speed:The frequency at which the memory (e.g. RAM) runs.
3200 MHz
CAS latency:Column Address Strobe (CAS) latency, or CL, is the delay time between the moment a memory controller tells the memory module to access a particular memory column on a RAM module, and the moment the data from the given array location is available on the module's output pins. In general, the lower the CAS latency, the better.
22
ECC:ECC means Error Correction Code, and it is memory that is able to detect and correct some memory errors without user intervention.
No
Memory form factor:Design of the memory e.g. 240-pin DIMM, SO-DIMM.
260-pin SO-DIMM
Component for:What this product is used as a part of (component for).
Laptop
Internal memory type:The type of internal memory such as RAM, GDDR5.
DDR4
Memory layout (modules x size):
1 x 8 GB
Internal memory:A computer's memory which is directly accessible to the CPU.
8 GB

Product details

HMA81GS6DJR8N-XN SK Hynix

SK Hynix HMA81GS6DJR8N-XN memory module 8 GB 1 x 8 GB DDR4 260-pin SO-DIMM

£82.16 and

SKU: HMA81GS6DJR8N-XN

SK Hynix HMA81GS6DJR8N-XN memory module 8 GB 1 x 8 GB DDR4 260-pin SO-DIMM

Quick Code: Q0 MPN: HMA81GS6DJR8N-XN

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